III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

A III nitride semiconductor light emitting element is provided with a substrate (1) and a light emitting layer (5) having a multiquantum well structure. The multiquantum well structure is provided with a barrier layer (5a) composed of a gallium containing III nitride semiconductor material, and a well layer (5b) on the surface of the substrate. Each of the well layers having the multilayer quantum well structure is composed of a III nitride semiconductor layer, which has an acceptor impurity added, a layer thickness different from each other and is composed of a III nitride semiconductor layer of the same conductivity type as that of the barrier layer. Thus, the III nitride semiconductor white light emitting element having high luminance and high color rendering properties is easily formed in the simple structure without requiring fine component adjustment of a fluorescent material.