| 摘要 |
A tunable semiconductor laser device includes a wavelength control region that is formed to include an active layer formed above a semiconductor substrate in an optical waveguide which guides the light generated by the active layer and that includes in at least one portion a diffraction grating which selects light having a predetermined wavelength from the light generated by the active layer, a cladding layer, an insulation film formed above the cladding layer, a first driving electrode formed below the semiconductor substrate, a second driving electrode formed above the cladding layer, a heating portion that is formed above the insulation film and that is used to heat at least one portion of the wavelength control region, first and second heating terminals provided in the heating portion, and first and second connection lines that connect in series between the first and second driving electrodes through a power source. By tuning the current supplied from the power source to the first and second connection lines substantially connected in series through the heating portion, the tunable semiconductor laser device can be controlling the wavelength of the light derived to an outside from the optical waveguide.
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