摘要 |
A process of making an organic thin film on a substrate by atomic layer deposition is disclosed, the process comprising simultaneously directing a series of gas flows along substantially parallel elongated channels, and wherein the series of gas flows comprises, in order, at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, optionally repeated a plurality of times, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material wherein the first reactive gaseous material, the second reactive gaseous material or both is a volatile organic compound. The process is carried out substantially at or above atmospheric pressure and at a temperature under 250°C, during deposition of the organic thin film. |
申请人 |
EASTMAN KODAK COMPANY;FREEMAN, DIANE CAROL;LEVY, DAVID HOWARD;COWDERY-CORVAN, PETER JEROME |
发明人 |
FREEMAN, DIANE CAROL;LEVY, DAVID HOWARD;COWDERY-CORVAN, PETER JEROME |