HETERO-STRUCTURE FIELD EFFECT TRANSISTOR, INTEGRATED CIRCUIT INCLUDING A HETERO-STRUCTURE FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING A HETERO-STRUCTURE FIELD EFFECT TRANSISTOR

摘要

A hetero-structure field effect transistor (HFET), may include a first layer (3) made from a first semiconductor material and a second layer (4) made from a second semiconductor material. An interface (8) at which the first layer and the second layer are in contact with each other may be provided, along which a tw o dimensional electron gas(2DEG) (9) is formed in a part of the first layer directly adjacent to the interface. The transistor may further include a gate structure (6) for controlling a conductance of the channel; a substrate layer (1) made from a substrate semiconductor material, and a dielectric layer (2) separating the first layer from the substrate layer. A contact (7) may include an electrical connection (70) between the substrate layer and the first layer. The electrical connection may include a passage (22) through the dielectric layer filled with an electrically conducting material which is electrically connected to the first layer.