发明名称 METHOD OF FORMING RESIST PATTERN
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of forming a resist pattern, which can obtain a desired resist pattern profile. <P>SOLUTION: The method includes: a process of forming a resist film on a substrate to be processed; a baking process of causing a temperature gradient in a thickness direction of the resist film to make the temperature higher on the bottom of the resist film on a side of the substrate to be processed than on the upper surface of the resist film; a process of exposing the resist film; and a process of developing the resist film. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009071115(A) 申请公布日期 2009.04.02
申请号 JP20070239131 申请日期 2007.09.14
申请人 TOSHIBA CORP 发明人 NAKA YOSHISUKE
分类号 H01L21/027;G03F7/11;G03F7/38 主分类号 H01L21/027
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