| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique appropriately inspecting the short-circuit resistant amount of a transistor. SOLUTION: This invention provides the method of inspecting a transistor. This method comprises processes of: measuring the gate threshold voltage of the transistor and specifying a first gate threshold voltage; heating the transistor by making current flow between a collector and an emitter of the transistor or between a source and a drain; measuring the gate threshold voltage of the transistor which is heated to high temperatures and specifying a second gate threshold voltage; calculating the gate threshold voltage difference, based on the first gate threshold voltage and the second gate threshold voltage; and determining the quality of the transistor, based on the gate threshold voltage difference. COPYRIGHT: (C)2009,JPO&INPIT
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