| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve the problem that it is difficult to miniaturize a power semiconductor device while at least maintaining current characteristics, since it is generally required to increase the number of transistor cells and to assure a larger size of a substrate (chip) in order to obtain a high withstand voltage and large current capacity, in the trend of request for smaller size or low voltage driving in a market. <P>SOLUTION: A square header having two mounting regions is folded back and two semiconductor chips are bonded to facing mounting regions. So, a lamination structure of semiconductor chip is actualized with the mounting area of a package being only the area for a conventional single amount, providing characteristics of the amount of two semiconductor chips. Thus, compared with the case of a single semiconductor chip, on-resistance decreases associated with increase in the number of transistor cells, allowing low-voltage driving. A larger current is allowed as well. When compared with the case in which two semiconductor chips are mounted on the header side by side, the mounting area of package profile can be reduced. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
