| 摘要 |
A manufacturing method of a semiconductor device is provided to prevent the fail of the storage electrode by progressing the etch back process for the separation of the conductive layer for the storage electrode with two steps. An etch stopping layer(320) and a sacrificial dielectric film are formed on a semiconductor substrate(300) including a storage node contact(310). The mask pattern defining the store electrode territory is formed on the top of the sacrificial dielectric film. The storage node contact is exposed by etching the sacrificial dielectric film and the etch stopping layer. A conductive layer(350) for the storage electrode and a barrier metal layer of the constant thickness are formed on the whole surface. The conductive layer for the storage electrode is separated by removing the conductive layer for the storage electrode of the upper part of the sacrifice insulating layer pattern. The pattern residue formed on the top of the conductive layer for the storage electrode is removed using the etching process. The cylindrical storage node is formed by removing the sacrifice insulating layer pattern. A dielectric film(360) is formed on the whole surface including the storage electrode. A plate electrode(370) is formed on the top of the dielectric film.
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