PHOTODIODE OF FINGER TYPE TO REDUCE NOISE AND MANUFACTURING MATHOD THEREOF

摘要

A finger type photo diode and a manufacturing method thereof are provided to improve the photonic efficiency and the reliability of the photo diode by turning down the dangling bond and the noise. An epitaxial layer(220) is formed in a lower plate(210). A finger doped layer(230) formed with the finger type is formed in the top surface of the epitaxial layer. A shallow doped layer(240) has the top surface exposed to the outside of the epitaxial layer. The lower plate is formed by doping the P+ type impurity of the high concentration to the semiconductor substrate consisting of the silicon etc. The impurity of the N+ type like the arsenic(As) etc is doped in the epitaxial layer. The finger doped layer formed in the epitaxial layer prevents the absorption of the light which is income from the outside.