VERTICALLY STRUCTURED GAN TYPE LED DEVICE

摘要

A vertically structured GaN type LED device is provided to improve the heat radiating property by forming a structural support layer with the carbon nanotube. An n-type bonding pad(110) is formed on the top part of the vertical structure gallium nitride-based LED element. An n-type electrode(120) is formed on the bottom part of the n-type bonding pad. An n-type nitride gallium film(130) is formed in the bottom part of n-type electrode. The n-type nitride gallium film is formed with the GaN layer or the GaN/AlGaN layer doped by the n-type impurity. An active layer(140) and a p-type nitride gallium film(150) are formed on the bottom part of the n-type nitride gallium film. A p-type electrode(160) is formed in the bottom part of the p-type nitride gallium film of the gallium nitride-based LED structure. A structural support layer(180) supporting the gallium nitride-based LED structure is formed on the bottom part of p-type electrode. The structural support layer is made of the carbon nanotube. A bonding layer(170) is formed between the p-type electrode and the structural support layer. The bonding layer has the first Ohmic layer(170a), a bonding layer(170b) and a laminating structure of the second Ohmic layer(170c).