发明名称 Iridium/zirconium oxide structure
摘要 Embodiments of an electronic apparatus and embodiments for methods of forming the electronic apparatus include a conductive layer having an iridium-based layer, where the conductive layer is disposed on a dielectric layer containing zirconium oxide. In various embodiments, each of the zirconium oxide layer and the iridium-based layer may be structured as one or more monolayers. In various embodiments, each of the iridium-based layer and the zirconium oxide layer may be formed using atomic layer deposition.
申请公布号 US7510983(B2) 申请公布日期 2009.03.31
申请号 US20050152759 申请日期 2005.06.14
申请人 MICRON TECHNOLOGY, INC. 发明人 AHN KIE Y.;FORBES LEONARD
分类号 H01L21/469;H01L21/31 主分类号 H01L21/469
代理机构 代理人
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