发明名称 PEROVSKITE TYPE OXIDE, FERROELECTRIC FILM, PROCESS FOR PRODUCING SAME, FERROELECTRIC DEVICE, AND LIQUID DISCHARGE APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a PZT perovskite type oxide in which it is possible to add 5 mol% or more of a donor ion to the A site without adding a sintering aid or an acceptor ion. <P>SOLUTION: The perovskite type oxide of the present invention is represented by the formula: (Pb<SB>1-x+&delta;</SB>M<SB>x</SB>) (Zr<SB>y</SB>Ti<SB>1-y</SB>)O<SB>z</SB>, wherein M represents at least one kind of element selected from the group consisting of Bi and lanthanide elements, x represents a number satisfying the condition of 0.05&le;x&le;0.4, and y represents a number satisfying the condition of 0<y&le;0.7, the standard composition being such that &delta;=0, and z=3, with the proviso that the value of &delta; and the value of z may deviate from the standard values of 0 and 3, respectively, within a range such that the perovskite structure is capable of being attained. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009062208(A) 申请公布日期 2009.03.26
申请号 JP20070229792 申请日期 2007.09.05
申请人 FUJIFILM CORP 发明人 SHINKAWA TAKAMI;FUJII TAKAMITSU
分类号 C01G25/00;B41J2/045;B41J2/055;B41J2/135;B41J2/14;B41J2/145;B41J2/155;B41J2/16;C01G23/00;C04B35/49;C04B35/491;C23C14/08;C23C14/34;H01L21/316;H01L41/09;H01L41/18;H01L41/187;H01L41/316;H01L41/39 主分类号 C01G25/00
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