| 摘要 |
PROBLEM TO BE SOLVED: To provide an inspection/analysis method where a substrate is not vainly disposed of for evaluation, and although a wafer from which a sample is taken up for inspection is returned to a process, no defect is caused, and to provide a method for manufacturing an electronic part. SOLUTION: The method for inspecting/analyzing the substrate is that a region including at least a region irradiated with a first ion beam on a substrate is irradiated with a second ion beam to remove at least part of the sample surface where a seed of the first ion beam is contained. This allows an inspection halfway to be performed without cutting off the substrate for improving yield in a semiconductor device and the like, and allows the reduction of smearing including an element seed that has constituted the ion beam and smearing including an element seed that constitutes a depository film to be achieved. COPYRIGHT: (C)2009,JPO&INPIT
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