发明名称 FIELD-EFFECT TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To solve: the problem of threshold value voltage control of thin-film transistors (TFT) using carbon nanotubes and an organic semiconductor; and the problem of a hysteresis phenomenon especially in the TFT using carbon nanotubes. SOLUTION: In a field-effect transistor using one of carbon nanotubes and an organic semiconductor or a composite material of the both for a channel region, an amino parylene high polymer or the copolymer thereof is used for a gate insulating film and/or an electrode protective film. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009064953(A) 申请公布日期 2009.03.26
申请号 JP20070231358 申请日期 2007.09.06
申请人 NEC CORP 发明人 NIHEI FUMIYUKI
分类号 H01L29/786;H01L21/312;H01L29/06;H01L51/05;H01L51/30 主分类号 H01L29/786
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