| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique for forming a marking that can be identified easily on the surface of a semiconductor device. SOLUTION: In the semiconductor device 1 in which a metal film is formed on the surface of an Si semiconductor layer, Sn-based solder 10 is arranged in a range for forming a mark 3 on a surface 20a of the metal film, the semiconductor device 1 is heated, an alloy 12 of the solder 10 in a range in which the solder 10 is arranged and the metal film is formed, and the mark 3 of the alloy 12 is formed. In the semiconductor device in which the surface of the Si semiconductor layer is exposed, the surface of the Si semiconductor layer in the range for forming the marking is heated locally, an oxide film is formed on the surface of the Si semiconductor layer in the range, and a mark is formed by an oxide film. COPYRIGHT: (C)2009,JPO&INPIT
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