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发明名称
METHOD FOR LIMITING INTERNAL DIFFUSION IN A SEMICONDUCTOR DEVICE WITH COMPOSITE SI/SIGE GATE
摘要
申请公布号
EP0976149(B8)
申请公布日期
2009.03.25
申请号
EP19990903756
申请日期
1999.02.15
申请人
COMMISSARIAT A L'ENERGIE ATOMIQUE
发明人
BENSAHEL, DANIEL;CAMPIDELLI, YVES;MARTIN, FRANCOIS;HERNANDEZ, CAROLINE
分类号
H01L21/28;H01L21/318;H01L29/423;H01L29/43;H01L29/49;H01L29/78
主分类号
H01L21/28
代理机构
代理人
主权项
地址
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