| 摘要 |
An active matrix substrate (12) includes a substrate, a TFT (24) formed on the substrate, a storage capacitor element (20) formed on the substrate, an interlayer insulating film covering the storage capacitor element (20), and a pixel electrode (21) formed on the interlayer insulating film. The storage capacitor element (20) includes a storage capacitor line (27), an insulating film formed on the storage capacitor line (27), and two or more storage capacitor electrodes (25a, 25b, 25c) opposed to the storage capacitor line (27) with the insulating film interposed therebetween. The two or more storage capacitor electrodes (25a, 25b, 25c) are electrically connected via associated contact holes (26a, 26b, 26c) formed in the interlayer insulating film to the pixel electrode (21) and electrically continuous with a drain electrode of the TFT (24). |
