| 摘要 |
<p>A method for recovering transmittance of substrate after defect-repairing photomask is provided to suppress the transmittance deterioration of the substrate according to correction of detects by performing an addition progress. The mask pattern(200)is formed in the substrate(100). The mask pattern is patterned by the selection etch process using the resist pattern. In the patterning process, the pattern defect of the mask pattern is caused. In order to correct the pattern defect, the gallium ion beam is irradiated in the pattern defect. The pattern defect is removed using the gallium ion beam. In the inspection process of the gallium ion beam, the stain or the damaged layer(101) is caused in the surface of the substrate of the lower part. The damage layer is etched by providing the hydroxyl radical on the substrate. The damage of substrate is recovered by using the hydroxyl radical.</p> |
