发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
<p>An object is to provide a technique to manufacture an insulating film having excellent film characteristics. In particular, an object is to provide a technique to manufacture a dense insulating film with a high withstand voltage. Moreover, an object is to provide a technique to manufacture an insulating film with few electron traps. An insulating film including oxygen is subjected to plasma treatment using a high frequency under the conditions where the electron density is 1 1011 cm-3 or more and the electron temperature is 1.5 eV or less in an atmosphere including oxygen.</p> |
申请公布号 |
KR20090029738(A) |
申请公布日期 |
2009.03.23 |
申请号 |
KR20087031516 |
申请日期 |
2007.05.16 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KAKEHATA TETSUYA;TANAKA TETSUHIRO;ASAMI YOSHINOBU |
分类号 |
H01L21/8247;H01L21/336;H01L27/115 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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