| 摘要 |
<p>A flash memory device and method for fabricating the same are provided to improve the coupling ratio of the memory device even when the memory device is miniaturized. The coupling oxide(33) is formed in the active area of the semiconductor substrate(31). The coupling oxide can be formed by laminating successively the tunnel oxide film, and the trap nitride film and block oxide film. The first control gate(34) is formed on the coupling oxide. The second control gate(38) surrounds the side of the first control gate and coupling oxide. Therefore, the contact area between the coupling oxide and the first control gate are increased.</p> |
