| 摘要 |
A method for reading a NAND flash memory device is provided. The NAND flash memory device includes a first bit line that is selected and a second bit line that is not selected. Each bit line is connected to a cell string including a string selection transistor, a plurality of memory cell transistors, and a source selection transistor connected in series. In the method, first, the first bit line is precharged while power supply voltage is applied to the second bit line. The string selection transistors are turned on and a read voltage is applied to a selected memory cell while a pass voltage is applied to unselected memory cells. The state of the selected memory cell transistor is detected according to whether or not charge precharged on the first bit line has been discharged.
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