| 摘要 |
A semiconductor memory device is provided to reduce a writing time by writing data to a plurality of cells by a selection switch at the same time. A semiconductor memory device includes a read/write bit line(BL1~BLn), a selection switch(SW0), a plurality of cells(C1~Cn), and a plurality of switching devices(SW1~SWn). The read/write bit line supplies a cell driving voltage. The selection switch is connected to the read/write bit line, and is controlled by a word line. A plurality of cells is serially connected between a selection unit and a source line, and performs a reading/writing of data according to the cell driving voltage. A plurality of switching devices is parallel connected to a plurality of cells, and is selectively controlled by a plurality of bit lines.
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