发明名称 |
Magnetic random access memory and method of reading data from the same |
摘要 |
A magnetic random access memory (MRAM) includes a memory cell having a first transistor and a first magnetic tunneling junction (MTJ) layer, and a reference cell operable as a basis when reading data stored in the memory cell, the reference cell including second and third MTJ layers arranged in parallel to each other, and a second transistor connected in series to each of the second and third MTJ layers, the second transistor having a driving capability corresponding to twice a driving capability of the first transistor of the memory cell.
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申请公布号 |
US2009067233(A1) |
申请公布日期 |
2009.03.12 |
申请号 |
US20080230855 |
申请日期 |
2008.09.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK WAN-JUN;KIM TAE-WAN;PARK SANG-JIN;KIM DAE-JEONG;LEE SEUNG-JUN;SHIN HYUNG-SOON |
分类号 |
G11C11/14;G11C11/15;G11C7/06;G11C7/14;G11C11/16;G11C11/409 |
主分类号 |
G11C11/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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