MANUFACTURING METHOD OF SEMICONDUCTOR, MANUFACTURING APPARATUS FOR SEMICONDUCTOR AND DISPLAY UNIT

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor for producing a thin-film transistor while protecting a channel region interface.

SOLUTION: This manufacturing method of a semiconductor for producing a coplanar-type thin-film transistor includes: forming a microcystalline film 10 which becomes a channel region on a glass substrate S; forming a sacrificial silicon oxide film 20 on the microcystalline film 10; laminating a doped silicon film 30 which becomes a source region and a drain region in a state with the interface of the microcystalline film 10 being protected by the sacrificial silicon oxide film 20; applying a photoresist film R on the doped silicon film 30 and planarizing the film; and etching until the microcystalline film 10 and the doped silicon film 30 are aligned substantially at the same plane level under a predetermined condition in a state of the sacrificial silicon oxide film 20 being exposed.

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