发明名称 |
DRY ETCHING METHOD OF HIGH-K FILM |
摘要 |
An object of the invention is to provide a dry etching method of a metal oxide High-k film having etching characteristics which achieve a small etching rate difference and a small profile difference between open area and dense area while keeping a high selectivity to a polysilicon underlying film. In the method of dry-etching a High-k film by using a plasma, a small amount of fluorocarbon gas having a high carbon ratio is added to a BCl3 gas mixed with a rare gas.
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申请公布号 |
US2009065479(A1) |
申请公布日期 |
2009.03.12 |
申请号 |
US20080016434 |
申请日期 |
2008.01.18 |
申请人 |
NAKAUNE KOICHI;OYAMA MASATOSHI;TANAKA MOTOHIRO;TAMURA HITOSHI;SAKAGUCHI MASAMICHI |
发明人 |
NAKAUNE KOICHI;OYAMA MASATOSHI;TANAKA MOTOHIRO;TAMURA HITOSHI;SAKAGUCHI MASAMICHI |
分类号 |
C23F1/00 |
主分类号 |
C23F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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