| 摘要 |
<p>An MTJ element requiring a small current value for writing, and an MRAM and a spin transistor of low power consumption employing such MTJ element. The ferromagnetic tunnel junction element has such a structure as a ferromagnetic fixed layer including at least one ferromagnetic layer, an insulating layer, and a ferromagnetic free layer including at least one first ferromagnetic layer are laminated sequentially. The insulating layer is formed of MgO, the first ferromagnetic layer is an (Fe, Co, Ni)SiB ferromagnetic layer, the first ferromagnetic layer is contiguous to the insulating layer, the insulating layer and the first ferromagnetic layer are composed of single crystal or microcrystal and forming an epitaxial junction.</p> |
