发明名称 |
SCHOTTKY DIODE WITH INCORPORATED PN- JUNCTIONS |
摘要 |
<p>A semiconductor device comprises a drift layer (3) doped according to a first conductivity type; a drain contact (2) on a first surface of the drift layer (3); a plurality of additional layers of semiconductor material (7, 7') on a second surface of the drift layer (3) opposite the drain contact (2) doped according to a second conductivity type; and a source contact (1). The plurality of additional layers of semiconductor material (7, 7') is arranged to form a plurality of concentric rings of semiconductor material on the second surface of the drift layer (3) such that regions of the second surface of the drift layer (3) between and laterally separating the plurality of concentric rings of semiconductor material form Schottky-contact regions (6). The source contact (1) is in direct contact with the drift layer (3) in the Schottky-contact regions (6).</p> |
申请公布号 |
EP2033226(A1) |
申请公布日期 |
2009.03.11 |
申请号 |
EP20070748503 |
申请日期 |
2007.05.22 |
申请人 |
CREE SWEDEN AB |
发明人 |
HARRIS, CHRISTOPHER;BASCERI, CEM;BERTILSSON, KENT |
分类号 |
H01L29/872;H01L21/761;H01L29/16 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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