| 摘要 |
A method for fabricating an isolation layer in a semiconductor device is provided to prevent the generation of nano void by reducing DSR(Deposition Sputtering Ratio). A method for fabricating an isolation layer in a semiconductor device includes the step for forming a trench(112) within a semiconductor substrate(100); the step for forming the flow dielectric which reclaims the trench; the step for recessing the flow dielectric; the step for depositing the filling isolation layer on the flow dielectric; the step for maintaining the DSR lower than 22; the step for reclaiming the trench while suppressing the growth of the trench side.
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