发明名称 |
Relaxed SiGe platform for high speed CMOS electronics and high speed analog circuits |
摘要 |
Structures and methods for fabricating high speed digital, analog, and combined digital/analog systems using planarized relaxed SiGe as the materials platform. The relaxed SiGe allows for a plethora of strained Si layers that possess enhanced electronic properties. By allowing the MOSFET channel to be either at the surface or buried, one can create high-speed digital and/or analog circuits. The planarization before the device epitaxial layers are deposited ensures a flat surface for state-of-the-art lithography.
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申请公布号 |
US7501351(B2) |
申请公布日期 |
2009.03.10 |
申请号 |
US20040774890 |
申请日期 |
2004.02.09 |
申请人 |
AMBERWAVE SYSTEMS CORPORATION |
发明人 |
FITZGERALD EUGENE A. |
分类号 |
H01L21/31;H01L21/20;H01L21/337;H01L21/762;H01L21/8234;H01L21/8238;H01L27/092;H01L29/10;H01L29/78;H01L29/80 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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