INTEGRATED PASSIVE DEVICES AND METHOD FOR MANUFACTURING THE SAME

摘要

An integrated passive devices and a method for manufacturing the same are provided to minimize the insertion loss on the corresponding action frequency zone. An integrated passive device manufacturing method includes the step of providing a substrate(20); the step of forming an anodized aluminum layer(10) having air bubble of nano-sizes on the top of the substrate; the step of forming an oxide silicon layer(30) by plating the oxidation silicon(Sio2) on the anode aluminum oxide layer; the step of forming one or more thin film passive devices(40,40') on the laminating structure of the oxide silicon layer.