发明名称 Piezoelectric thin film resonator and devices provided with the same
摘要 A piezoelectric thin film resonator includes a substrate in which a cavity is formed, a first electrode having a first electrode edge and partly spanning the cavity on the substrate; a piezoelectric layer placed on the first electrode, a second electrode having a second electrode edge and placed on the piezoelectric layer, a resonator unit constituted by an overlapping part of the first electrode, the piezoelectric layer, the second electrode, and the cavity; and a second lead wiring which is integral with the second electrode, extends to the substrate where the cavity is not present, and has a width larger than a part of a peripheral length of the cavity to which the second electrode edge extends. In the piezoelectric thin film resonator, a first length defined by the periphery of the first electrode of the resonator unit is larger than a second length defined by the second electrode edge of the resonator unit.
申请公布号 US7498904(B2) 申请公布日期 2009.03.03
申请号 US20060447999 申请日期 2006.06.07
申请人 发明人
分类号 H03H9/00 主分类号 H03H9/00
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