发明名称 |
Semiconductor device with low contact resistance and method for fabricating the same |
摘要 |
A semiconductor device with a low contact resistance and a method for fabricating it are described. The semiconductor device includes a substrate structure with a contact hole and a contact plug formed on the contact hole. The contact plug is provided with an epitaxial silicon layer and a metal layer formed on the epitaxial silicon layer. The method for fabricating such semiconductor device includes steps of exposing a portion of a substrate structure to form a contact hole, then forming an epitaxial silicon layer and a metal layer.
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申请公布号 |
US7498218(B2) |
申请公布日期 |
2009.03.03 |
申请号 |
US20040025487 |
申请日期 |
2004.12.28 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
AHN TAE-HANG |
分类号 |
H01L21/28;H01L21/8238;H01L21/205;H01L21/285;H01L21/3205;H01L21/768;H01L21/8242;H01L23/48;H01L23/485;H01L23/52;H01L23/522;H01L27/108;H01L29/41;H01L29/80;H01L29/94 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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