发明名称 TEST PATTERN AND METHOD FOR FORMING THE SAME AND METHOD FOR MEASURING THICKNESS OF ISOLATION FILM USING THE SAME
摘要 A test pattern and a method for forming the same and a method for measuring thickness of an isolation film using the same are provided to measure and thickness of a dielectric layer remaining on the upper part of a fuse by using principles of capacitor. A substrate comprises an electrode area(A) facing each other and an insulation film area(B) between electrode areas. A conductive pattern for a fuse is made of a first conductive pattern and a second conductive pattern. The first conductive pattern is formed in the electrode area on the substrate. The second conductive pattern is formed in the insulation film area on the substrate. The second conductive pattern is located at the fixed interval(d3) from the first conductive pattern. A metal pattern is formed in the upper part the first conductive pattern. An interlayer insulating film(22) is formed in the insulation film area. The interlayer insulating film remains in the top of second electric conduction pattern to prescribed thickness(T1).
申请公布号 KR20090020788(A) 申请公布日期 2009.02.27
申请号 KR20070085363 申请日期 2007.08.24
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE, MIN YUNG
分类号 H01L23/544 主分类号 H01L23/544
代理机构 代理人
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