| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern forming method capable of forming a fine pattern in a recess part, and a manufacturing method of a semiconductor device provided with the fine pattern in the recess part. SOLUTION: The pattern forming method comprises: a process of forming a resist film 14 so as to fill a recess 12a; a process of irradiating the resist film 14 with light by adjusting a light quantity so as to expose the resist film 14 from the opening surface of the recess 12a to a prescribed depth L2 and not to expose the resist film 14 from the prescribed depth L2 to the bottom surface of the recess 12a; a process of developing the resist film 14 and leaving the non-exposed resist film 14a on the bottom surface of the recessed part; and a process of forming a pattern 16 on the left resist film 14a by a photolithography method. With the resist film 14a provided with the pattern 16 as a mask, the bottom surface of the recess 12a is etched and the pattern 16 is transferred. COPYRIGHT: (C)2009,JPO&INPIT
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