发明名称 SPUTTERING TARGET AND ITS MANUFACTURING METHOD
摘要 A sputtering target exhibiting a significantly enhanced initial stability, causing reduced arcings at the sputtering middle and last stages, and manufactured at low cost, its manufacturing method, and a sputtering method are provided. The sputtering target is used for sputtering and has a deposit on a non-erosion part. At least the layer near the interface of the deposit has a good crystallinity. Alternatively, the sputtering target is used for sputtering and there is substantially no gap between the deposit on a non-erosion part after energy of 50 Wh/cm2 or more is inputted and the sputter surface. The sputter surface of the target has a water-adsorptive layer.
申请公布号 KR20090020624(A) 申请公布日期 2009.02.26
申请号 KR20087030740 申请日期 2008.12.17
申请人 MITSUI MINING & SMELTING CO., LTD. 发明人 TAKAHASHI SEIICHIRO;KIYOTO JUNICHI
分类号 C23C14/34 主分类号 C23C14/34
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