ORGANIC THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME

摘要

An organic thin film transistor and a method for manufacturing the same are provided to reduce a leakage current by forming a gate insulating layer with high filling density by an ion beam assisted deposition method. An organic thin film transistor includes a gate electrode(110), a gate insulating layer(120), an organic insulating layer(124), an organic semiconductor layer(130), a source electrode (140a) and a drain electrode. The gate electrode is formed on the substrate(100). The gate insulating layer is formed in the front side of the substrate including the gate electrode by using an ion beam assisted deposition method. The organic semiconductor layer is formed in an upper part of the gate electrode. The gate insulating layer is interposed between the gate electrode and the organic semiconductor layer. The source electrode is formed in the upper part of the organic semiconductor layer. The drain electrode faces the source electrode. The organic insulating layer is formed between the gate insulating layer and the organic semiconductor layer. The gate insulating layer includes the silicon dioxide.