Methods of fabricating flash memory devices having a sloped trench isolation structure

摘要

A method of fabricating a flash memory device. Parallel mask patterns are formed on a substrate. The substrate is etched using the mask patterns to form trenches. An insulating layer pattern is formed in the trenches and an area between the mask patterns. The mask patterns are removed to expose an upper sidewall of the insulating layer pattern that protrudes away from a top surface of the substrate. The insulating layer pattern is isotropically etched to form sloped sidewalls that protrude away from the top surface of the substrate.