发明名称 CMP Polishing Method, CMP Polishing Apparatus, and Process for Producing Semiconductor Device
摘要 When the remaining slurry and polishing residue are removed by cleaning with a cleaning liquid (preferably a cleaning liquid containing a surfactant), organic matter in the cleaning liquid containing a surfactant seeps into the interlayer insulating film 3. Therefore, the substrate is subsequently washed with an organic solvent or a solution containing an organic solvent, thus washing away the organic matter that has seeped into the interlayer insulating film 3. Although the interlayer insulating film 3 is subjected to a hydrophobic treatment, since the solvent used is an organic solvent, this solvent is able to seep into the interlayer insulating film 3, dissolve the organic matter, and wash the organic matter away without being affected by this hydrophobic treatment. Afterward, the substrate 1 is dried, and the organic solvent or solution containing an organic solvent that is adhering to the surface is removed.
申请公布号 US2009047785(A1) 申请公布日期 2009.02.19
申请号 US20050795697 申请日期 2005.12.21
申请人 TAKADA SYOZO;MATSUO HISANORI;ISHIKAWA AKIRA 发明人 TAKADA SYOZO;MATSUO HISANORI;ISHIKAWA AKIRA
分类号 H01L21/306;B24B7/00;B24B37/04;C11D1/00;C11D3/14;C11D3/43;C11D7/50;H01L21/304 主分类号 H01L21/306
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