发明名称 |
Method of manufacturing a semiconductor device having a one time programmable (OTP) erasable and programmable read only memory (EPROM) cell |
摘要 |
Provided is an erasable and programmable read only memory (EPROM) device in which a plasma enhanced oxide (PEOX) film covers an upper surface of a floating gate in a single poly one time programmable (OTP) cell and a method of manufacturing a semiconductor device having the same. The semiconductor device comprises a substrate having an OTP cell region, on which a floating gate is formed for making an OTP cell transistor, and a main chip region, on which a gate of a transistor is formed. A PEOX film is formed on the OTP cell region and the main chip region. The PEOX film covers the floating gate in a close state and covers the gate by a predetermined distance. A silicon oxy nitride (SiON) film Is interposed between the gate and the PEOX film in the main chip region.
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申请公布号 |
US7491657(B2) |
申请公布日期 |
2009.02.17 |
申请号 |
US20070681429 |
申请日期 |
2007.03.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE KI-HYUNG;YOO SEUNG-HAN |
分类号 |
H01L21/70;H01L27/10;H01L21/82;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;H01L29/94 |
主分类号 |
H01L21/70 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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