发明名称 LAYOUT STRUCTURE OF ACTIVE RESISTOR
摘要 A layout structure of an active resistor is provided to minimize a substrate noise and a coupling noise by forming N-type pocket well in a P-type substrate. At least two P-well regions are formed in a P-type substrate(200). The P-well regions are separated from each other by N-type pocket wells. At least two N-type active regions(110,120) are formed on the P-well regions and the N-type active regions are connected to each other by branch(130).
申请公布号 KR20090016061(A) 申请公布日期 2009.02.13
申请号 KR20070080423 申请日期 2007.08.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JUNG, SANG HOON;YI, CHUL WOO
分类号 H01C10/16 主分类号 H01C10/16
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