| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for treating a semiconductor wafer which can perform dicing while constraining occurrence of chipping. <P>SOLUTION: The method for treating a semiconductor wafer comprises (a) a step for grinding the back surface of the semiconductor wafer 1 while sticking a surface protective tape composed of a base film 51 and a radiation curing adhesive layer 52 to the pattern surface 2 side, (b) a step for exposing the adhesive layer 52 by stripping only the base film 51 and irradiating only a part of the exposed adhesive layer 52 other than the street 17 of the semiconductor wafer 1 with radiation, (c) a step for sticking a supporting/fixing tape to the back surface side of the semiconductor wafer 1, (d) a step for treating the semiconductor wafer 1 with plasma from the adhesive layer 52 side and etching a part of the adhesive layer 52 corresponding to the street not irradiated with radiation and the street of the semiconductor wafer to produce individualized chips, (e) a step for stripping the adhesive layer, and (f) a step for picking up the chip and transferring it to a die bonding step. <P>COPYRIGHT: (C)2009,JPO&INPIT |
