Verfahren zur Herstellung eines zweifach passivierten Leistungshalbleiterbauelements mit einer MESA Randstruktur

摘要

Power semiconductor component with a MESA structure comprises a semiconductor body with a first zone (10) of a first conducting type arranged on a first main surface (12) and running parallel to the main surfaces and a second zone (20) of a second conducting type running parallel to the main surfaces, a first edge surface (40) connected to the first main surface, an auxiliary surface (50) arranged parallel to the first main surface and a second edge surface (42). Both main surfaces are covered with a metallization (14) and a MESA structure is formed in the edge region. The edge surfaces and the auxiliary surface are covered with a passivating layer. - An INDEPENDENT CLAIM is also included for a process for a production of a power semiconductor component comprising forming a power semiconductor component with two zones of different conductivity on a wafer, forming the MESA edge structure of the component by producing trenches, coating the first main surface and the trenches with an a:C-H layer, filling the trenches with a dielectric material, removing the passivating layers from the later contact layers of the first main surface, metallizing the contact surfaces of the first main surface and the second main surface of the wafer, and dividing the wafer into individual components.