| 发明名称 |
Semiconductor thin film forming system |
| 摘要 |
<p>In a semiconductor thin film forming system for modifying a predetermined region of a semiconductor thin film by exposing the semiconductor thin film to projected light patterned through a pattern formed on a photo mask, the system includes a focusing mechanism for obtaining the focus of the patterned light on a predetermined region of the semiconductor thin film. This system can provide a crystallized silicon film having a trap state density less than 1012 cm-2 and can provide a silicon-insulating film interface exhibiting a low interface state density.
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| 申请公布号 |
EP1998364(A3) |
申请公布日期 |
2009.02.11 |
| 申请号 |
EP20080075745 |
申请日期 |
2000.07.08 |
| 申请人 |
NEC CORPORATION;SUMITOMO HEAVY INDUSTRIES, LTD. |
发明人 |
TANABE, HIROSHI;AKASHI, TOMOYUKI;WATABE, YOSHIMI |
| 分类号 |
H01L21/20;H01L21/205;B23K26/04;B23K26/06;B23K26/067;B23K26/073;C23C14/28;H01L21/027;H01L21/268;H01L21/336;H01L29/786;H01S3/00 |
主分类号 |
H01L21/20 |
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