发明名称 Pressure sensor adjustment using backside mask
摘要 Methods and apparatus for an absolute or gauge pressure sensor having a backside cavity with a substantially vertical interior sidewall. The backside cavity is formed using a DRIE etch or other MEMS micro-machining technique. The backside cavity has an opening that is cross shaped, where the dimensions of the cross may be varied to adjust pressure sensor sensitivity. The cross may have one or more rounded corners to reduce peak stress, for example, the interior corners may be rounded. A sensing conductor may be routed over one or more corners including the interior corners to detect breakage.
申请公布号 US7487681(B1) 申请公布日期 2009.02.10
申请号 US20070834013 申请日期 2007.08.06
申请人 SILICON MICROSTRUCTURES INC. 发明人 ALLEN HENRY V.
分类号 G01L7/08;G01L9/00 主分类号 G01L7/08
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