| 发明名称 |
Method for fabricating semiconductor device |
| 摘要 |
A metal film is deposited on a silicon region in a non-oxidizing atmosphere, after which the metal film is oxidized with radicals capable of oxidizing the metal film, such as oxygen radicals, to form a metal oxide film serving as a gate insulating film.
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| 申请公布号 |
US7488655(B2) |
申请公布日期 |
2009.02.10 |
| 申请号 |
US20040756248 |
申请日期 |
2004.01.14 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
HAYASHI SHIGENORI;YAMAMOTO KAZUHIKO |
| 分类号 |
H01L21/336;H01L21/283;H01L21/31;H01L21/316;H01L21/4763;H01L21/8234;H01L29/78 |
主分类号 |
H01L21/336 |
| 代理机构 |
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