| 摘要 |
<p>A method for making semiconductor device and method for making multi chip package is provided to supply stable electrical contact by using a penetrating electrode having excellent electrical contact. In a method for making semiconductor device and method for making multi chip package, an integrated circuit is formed on a wafer(S100), and a via hole is formed in the wafer(S110). The wafer in which the via hole is built up is arranged within the vacuum chamber(S130). A penetrating electrode is formed(S140) by coating the conductive material on the via hole in the vacuum chamber. The integrated circuit portion has the memory function, and the via hole is formed by one of dry etching, a wet etching, drilling or mechanical drilling mode using laser.</p> |
