Disclosed is a highly dielectric film which can be formed thin, while having excellent winding properties (flexibility) and low dielectric loss. This highly dielectric film contains a vinylidene fluoride polymer (A) and a complex oxide particle (B) represented by the following formula: MaTibOc (wherein M represents a group 2 metal element of the second to fifth row of the periodic table; a is 0.9-1.1; b is 0.9-1.1; and c is 2.8-3.2). The highly dielectric film contains 10-500 parts by mass of the complex oxide particle (B) per 100 parts by mass of the vinylidene fluoride polymer (A).
