HIGH BRIGHTNESS LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME

摘要

Provided is a high brightness light emitting diode having a thick window layer with a small warping and no process breakage in chip steps. A method for stably manufacturing such high brightness light emitting diode is also provided. The high brightness light emitting diode is provided with the AlGaInP four-element light emitting layer deposited on a GaAs substrate; a p-type GaP window layer deposited on the front surface of the AlGaInP four-element light emitting layer for taking out emitted light; and an n-type GaP window layer for taking out the emitted light. The n-type GaP window layer is deposited by vapor phase deposition on the rear surface of the AlGaInP four-element light emitting layer from which the GaAs substrate is removed by etching. The material composition of the n-type GaP window layer on the rear surface and that of the p-type GaP window layer on the front layer are identical, and a ratio X, i.e., a ratio of the n-type GaP window layer thickness on the rear surface to the thickness of the p-type GaP window layer on the front surface is set within a prescribed range.