发明名称 |
INTEGRATED CIRCUIT FORMATION USING DIFFERENT ANGLED IMPLANTS |
摘要 |
<p>A method of forming an integrated circuit includes forming a gate structure (110) over a semiconductor body (100), and forming a shadowing structure (112) over the semiconductor body laterally spaced from the gate structure, thereby defining an active area in the semiconductor body therebetween. The method further includes performing an angled implant (120) into the gate structure, wherein the shadowing structure substantially blocks dopant from the angled implant from implanting into the active area, and performing a source/drain implant into the gate structure and the active area.</p> |
申请公布号 |
WO2009018203(A2) |
申请公布日期 |
2009.02.05 |
申请号 |
WO2008US71319 |
申请日期 |
2008.07.28 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED;OBRADOVIC, BORNA;EKBOTE, SHASHANK, S. |
发明人 |
OBRADOVIC, BORNA;EKBOTE, SHASHANK, S. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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