| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device improved in the electrical characteristics, and to provide a method of forming the semiconductor memory device. SOLUTION: This semiconductor memory device includes a first interlayer insulating film 110 on a semiconductor substrate 110; a bit line BL arranged in one direction, on the first interlayer insulating layer 110; a bit line contact pad 124 electrically connected to the bit line BL, and disposed in the first interlayer insulating film 110; and a storage contact pad 122, disposed in the first interlayer insulating film 110. The top surface of the bit line contact pad 124 is lower than the top surface of the storage contact pad 122. COPYRIGHT: (C)2009,JPO&INPIT
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